Single-electron transistors in heterostructure nanowires.

Summary, in English

Semiconductor-based single-electron transistors have been fabricated using heterostructure nanowire growth, by introducing a double barrier of InP into InAs nanowires. From electrical measurements, we observe a charging energy of 4 meV for the approximately 55 nm diameter and 100 nm long InAs islands between the InP barriers. The Coulomb blockade can be periodically lifted as a function of gate voltage for all devices, which is a typical signature of single-island transistors. Homogeneous InAs nanowires show no such effect for the corresponding voltage ranges. ©2003 American Institute of Physics.

• Författare: Claes Thelander; Thomas Mårtensson; Mikael Björk; B J Ohlsson; Marcus Larsson; Reine Wallenberg; Lars Samuelson
• Avdelning/ar: Fasta tillståndets fysik; Centrum för analys och syntes; Neuronano Research Center (NRC)
• Publiceringsår: 2003
• Språk: Engelska
• Sidor: 2052-2054
• Publikation/Tidskrift/Serie: Applied Physics Letters
• Volym: 83
• Issue: 10
• Länkar: http://dx.doi.org/10.1063/1.1606889
• Dokumenttyp: Artikel i tidskrift
• Förlag: American Institute of Physics (AIP)
• Ämne: Chemical Sciences
• Status: Published
• Forskningsgrupp: Neuronano Research Center (NRC)
• ISBN/ISSN/Övrigt: ISSN: 0003-6951