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High Frequency Performance of Vertical InAs Nanowire MOSFET

In English

Författare

Summary, in English

We report on RF characterization of vertical, 100-nm-gate length InAs nanowire MOSFETs, utilizing wrap-gate technology and Al2O3 high-kappa gate oxide. The transistors show f(t)=5.6 GHz and f(max)=22 GHz, mainly limited by parasitic capacitances. The RF device performance is described using a hybrid-pi model taking hole generation at the drain into account. Electrostatic modeling of the parasitic capacitances for arrays of vertical nanowires indicates that a strong reduction in extrinsic capacitances can be achieved for devices with a small inter-wire separation.

Publiceringsår

2010

Språk

Engelska

Publikation/Tidskrift/Serie

2010 22Nd International Conference On Indium Phosphide And Related Materials (Iprm)

Dokumenttyp

Konferensbidrag

Förlag

IEEE - Institute of Electrical and Electronics Engineers Inc.

Ämne

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

22nd International Conference on Indium Phosphide and Related Materials

Conference date

2010-05-31 - 2010-06-04

Status

Published

Forskningsgrupp

  • Analog RF
  • Digital ASIC
  • Nano

ISBN/ISSN/Övrigt

  • ISSN: 1092-8669
  • ISBN: 978-1-4244-5919-3