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Surface diffusion effects on growth of nanowires by chemical beam epitaxy

Publiceringsår: 2007
Språk: Engelska
Publikation/Tidskrift/Serie: Journal of Applied Physics
Volym: 101
Dokumenttyp: Artikel i tidskrift
Förlag: American Institute of Physics


Surface processes play a large role in the growth of semiconductor nanowires by chemical beam

epitaxy. In particular, for III-V nanowires the surface diffusion of group-III species is important to

understand in order to control the nanowire growth. In this paper, we have grown InAs-based

nanowires positioned by electron beam lithography and have investigated the dependence of the

diffusion of In species on temperature, group-III and -V source pressure and group-V source

combinations by measuring nanowire growth rate for different nanowire spacings. We present a

model which relates the nanowire growth rate to the migration length of In species. The model is

fitted to the experimental data for different growth conditions, using the migration length as fitting

parameter. The results show that the migration length increases with decreasing temperature and

increasing group-V/group-III source pressure ratio. This will most often lead to an increase in

growth rate, but deviations will occur due to incomplete decomposition and changes in sticking

coefficient for group-III species. The results also show that the introduction of phosphorous

precursor for growth of InAs1−xPx nanowires decreases the migration length of the In species

followed by a decrease in nanowire growth rate.


  • Condensed Matter Physics



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