Variation of strain in granular GaAs:MnAs layers
Författare
Summary, in English
Granular GaAs(MnAs) layers with different Mn concentration and various layer thickness were grown by MBE method and subjected to annealing at 500A degrees C under ambient and enhanced hydrostatic pressure. Distinct influence of hydrostatic pressure applied during annealing on strain state of layers as well as on hexagonal MnAs inclusions was found. Pressure induced strain of inclusions is related to different bulk moduli of GaAs and of hexagonal MnAs. Formation of hexagonal inclusions depends on concentration of Mn in interstitial position in as-grown samples.
Avdelning/ar
Publiceringsår
2013
Språk
Engelska
Sidor
998-1001
Publikation/Tidskrift/Serie
Crystallography Reports
Volym
58
Issue
7
Dokumenttyp
Artikel i tidskrift
Förlag
MAIK Nauka/Interperiodica
Ämne
- Natural Sciences
- Physical Sciences
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 1063-7745