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Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study

In English

Författare

  • C. Coletti
  • S. Forti
  • A. Principi
  • K. V. Emtsev
  • Alexei Zakharov
  • K. M. Daniels
  • B. K. Daas
  • M. V. S. Chandrashekhar
  • T. Ouisse
  • D. Chaussende
  • A. H. MacDonald
  • M. Polini
  • U. Starke
Visa allt

Summary, in English

In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric-field-dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this paper, we present angle-resolved photoemission spectroscopy data which show with high resolution the electronic band structure of trilayer graphene obtained on alpha-SiC(0001) and beta-SiC(111) via hydrogen intercalation. Electronic bands obtained from tight-binding calculations are fitted to the experimental data to extract the interatomic hopping parameters for Bernal and rhombohedral stacked trilayers. Low-energy electron microscopy measurements demonstrate that the trilayer domains extend over areas of tens of square micrometers, suggesting the feasibility of exploiting this material in electronic and photonic devices. Furthermore, our results suggest that, on SiC substrates, the occurrence of a rhombohedral stacked trilayer is significantly higher than in natural bulk graphite.

Publiceringsår

2013

Språk

Engelska

Publikation/Tidskrift/Serie

Physical Review B (Condensed Matter and Materials Physics)

Volym

88

Issue

15

Dokumenttyp

Artikel i tidskrift

Förlag

American Physical Society

Ämne

  • Physical Sciences
  • Natural Sciences

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1098-0121