Ultra-low Voltage Embedded Memories – Design Aspects and a Biomedical Use-case
Författare
Summary, in Swedish
Paper I presents an ULP synthesizable memory using commercial standard-cells complemented with a low-leakage full-custom developed D-Latch with integrated 3-state output buffers as read-logic.
Paper II presents two ULP synthesizable memories which use a full-custom developed dual-Vth D-Latch, where PMOS transistors are implemented using a lower-Vth than NMOS transistors. The read-logic is implemented using complementary metal oxide semiconductors (CMOS) multiplexers in one of the memories and a mixture of 3-state buffers and CMOS multiplexers in the second memory.
Paper III presents a synthesizable memory using an area-optimized full-custom pass-latch where the pass transistors are implemented using a lower-Vth than the remaining transistors.
Paper IV explores the use of a general purpose (GP) process option [instead of low power (LP)] to achieve a higher maximum frequency at ultra-low voltage (ULV) and presents a coherent summary of the different trade-offs for SCMs, i.e., area, leakage power, access speed, access energy and retention voltage.
Paper V presents a wide operating range synthesizable memory designed in a 28 nm fully-depleted silicon-on-insulator (FD-SOI) process that takes advantage of the body bias capabilities to compensate for a slow corner using forward body bias (FBB).
Paper VI is a case study of an atrial fibrillation (AF) detector designed for sub-Vth operation combined with an ULP memory using standard-cells. The detector is aimed to be operated together with a pacemaker on a single battery charge for 10 years.
Paper VII presents energy savings by using clock- and power-gating of the AF detector presented in Paper VI.
Publiceringsår
2016-08-15
Språk
Engelska
Fulltext
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Dokumenttyp
Doktorsavhandling
Förlag
Department of Electrical and Information Technology, Lund University
Ämne
- Other Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- SRAM
- CMOS
- ultra-low voltage
- ultra-low power
- subthreshold
- standard-cell based memories
- atrial fibrillation
- SRAM
- CMOS
- ultra-low voltage
- ultra-low power
- subthreshold
- standard-cell based memories
- atrial fibrillation
Status
Published
Handledare
ISBN/ISSN/Övrigt
- ISBN: 978-91-7623-726-7
- ISBN: 978-91-7623-725-0
Försvarsdatum
9 september 2016
Försvarstid
10:15
Försvarsplats
Lecture hall E:1406, building E, Ole Römers väg 3, Lund University, Faculty of Engineering LTH, Lund
Opponent
- Vivek De (Doctor)