Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
Författare
Summary, in English
The influence of InAs orientations and high-k oxide deposition conditions on the electrical and
structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated
using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results
suggest that the interface traps around the conduction band edge are correlated to the As-oxide
amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide
determines the border trap density, hence the capacitance frequency dispersion. The comparison of
different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B
substrates followed by an annealing procedure at 400 oC.
structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated
using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results
suggest that the interface traps around the conduction band edge are correlated to the As-oxide
amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide
determines the border trap density, hence the capacitance frequency dispersion. The comparison of
different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B
substrates followed by an annealing procedure at 400 oC.
Publiceringsår
2012
Språk
Engelska
Sidor
3-132905
Publikation/Tidskrift/Serie
Applied Physics Letters
Volym
100
Issue
13
Fulltext
Länkar
Dokumenttyp
Artikel i tidskrift
Förlag
American Institute of Physics (AIP)
Ämne
- Atom and Molecular Physics and Optics
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- Interface
- InAs
- High k
- MOS capacitors
Status
Published
Forskningsgrupp
- Nano
- Synch Rad Res
ISBN/ISSN/Övrigt
- ISSN: 0003-6951