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Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates

Publiceringsår: 2012
Språk: Engelska
Sidor: 3-132905
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 100
Nummer: 13
Dokumenttyp: Artikel i tidskrift
Förlag: American Institute of Physics


The influence of InAs orientations and high-k oxide deposition conditions on the electrical and

structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated

using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results

suggest that the interface traps around the conduction band edge are correlated to the As-oxide

amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide

determines the border trap density, hence the capacitance frequency dispersion. The comparison of

different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B

substrates followed by an annealing procedure at 400 oC.


  • Atom and Molecular Physics and Optics
  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Interface
  • InAs
  • High k
  • MOS capacitors


  • Nano-lup-obsolete
  • Synch Rad Res-lup-obsolete
  • ISSN: 0003-6951

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