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In-Plane Magnetic Anisotropy and Temperature Dependence of Switching Field in (Ga, Mn)As Ferromagnetic Semiconductors

In English

Författare

  • S. Kamara
  • F. Terki
  • S. Charar
  • M. Dehbaoui
  • Janusz Sadowski
  • R. -M. Galera

Summary, in English

We explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Planar Hall Effect (PHE) measurements. Using low magnitude of applied magnetic field (i.e., when the magnitude H

is smaller than both cubic Hc and uniaxial Hu anisotropy field), we have observed various shapes of applied magnetic field direction dependence of Planar Hall Resistance (PHR). In particular, in two

regions of temperature. At T <TC/2, the “square-shape” signal and at T >TC/2 the “zigzag-shape” signal of PHR. They reflect different magnetic anisotropy and provide information about magnetization

reversal process in GaMnAs ferromagnetic semiconductor. The theoretical model calculation of PHR based on the free energy density reproduces well the experimental data. We report also the temperature dependence of anisotropy constants and magnetization orientations. The transition of easy axis from biaxial to uniaxiale axes has been observed and confirmed by SQUID measurements.

Publiceringsår

2012

Språk

Engelska

Sidor

4868-4873

Publikation/Tidskrift/Serie

Journal of Nanoscience and Nanotechnology

Volym

12

Issue

6

Dokumenttyp

Artikel i tidskrift

Förlag

American Scientific Publishers

Ämne

  • Nano Technology

Nyckelord

  • ferromagnetic semiconductors
  • spintronics
  • Planar Hall effect

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1533-4880