InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure
Författare
Summary, in English
Heteroepitaxial growth of InAs was investigated on sidewalls of InP nanowires (NWs) using metal-organic vapor phase epitaxy. InAs quantum wells (QWs) with smooth surface were formed on the InP NWs having perfect wurtzite phase structure. On the other hand, InAs quantum dots (QDs) were formed on wurtzite InP NWs purposely introduced with stacking-fault segments. Photoluminescence from single NWs attributed to both QWs and QDs was observed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3646386]
Publiceringsår
2011
Språk
Engelska
Publikation/Tidskrift/Serie
Applied Physics Letters
Volym
99
Issue
13
Dokumenttyp
Artikel i tidskrift
Förlag
American Institute of Physics (AIP)
Ämne
- Condensed Matter Physics
- Chemical Sciences
Nyckelord
- III-V semiconductors
- indium compounds
- MOCVD
- photoluminescence
- semiconductor growth
- semiconductor quantum dots
- semiconductor quantum
- wells
- stacking faults
- vapour phase epitaxial growth
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0003-6951