Annular Fast Electron Transport in Silicon Arising from Low-Temperature Resistivity
Författare
Summary, in English
Fast electron transport in Si, driven by ultraintense laser pulses, is investigated experimentally and via 3D hybrid particle-in-cell simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.
Avdelning/ar
Publiceringsår
2013
Språk
Engelska
Publikation/Tidskrift/Serie
Physical Review Letters
Volym
111
Issue
9
Länkar
Dokumenttyp
Artikel i tidskrift
Förlag
American Physical Society
Ämne
- Natural Sciences
- Atom and Molecular Physics and Optics
- Physical Sciences
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 1079-7114