Morphology and composition controlled GaxIn1-xSb nanowires: understanding ternary antimonide growth.

Summary, in English

Antimonide-based nanowires represent an important new class of material with great promise for both fundamental physics studies and various device applications. We report a comprehensive study on understanding the growth behaviour of GaxIn1-xSb nanowires on GaAs substrates using Au nanoparticles. First, the effect of growth parameters on the morphology and composition of GaxIn1-xSb nanowires is extensively studied over the entire compositional range (from 3 to ∼100% of In). Second, the obtained compositional results are explained by a kinetic model, suggesting an Arrhenius-type behavior for the trimethylindium (TMIn) precursor. Third, the particle composition is fully investigated and the implications for growth are discussed with reference to our calculated Au-Ga-In phase diagram. Fourth, a mechanism is presented to explain the temperature-dependent morphology and radial growth of the GaxIn1-xSb nanowires. Finally, we demonstrate homogeneous compositions in both axial and radial directions and the nanowires remain entirely twin-free zinc blende. The understanding gained from this study together with the potential to precisely tailor the band gap, wavelength and carrier mobilities allows fabrication of various GaxIn1-xSb-based nanowire devices.

• Författare: Sepideh Gorji; Martin Ek; Masoomeh Ghasemi; Philippe Caroff; Jonas Johansson; Kimberly Dick Thelander
• Avdelning/ar: Fasta tillståndets fysik; Centrum för analys och syntes; NanoLund: Centre for Nanoscience
• Publiceringsår: 2014
• Språk: Engelska
• Sidor: 1086-1092
• Publikation/Tidskrift/Serie: Nanoscale
• Volym: 6
• Issue: 2
• Länkar: http://dx.doi.org/10.1039/c3nr05079c
• Dokumenttyp: Artikel i tidskrift
• Förlag: Royal Society of Chemistry
• Ämne: Nano Technology
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 2040-3372