Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
Författare
Summary, in English
Quasi-free-standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the (6 root 3 x 6 root 3) R 30 degrees reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are covalently bound to this buffer layer, are now saturated by hydrogen bonds. The buffer layer is turned into a quasi-free-standing graphene monolayer with its typical linear pi bands. Similarly, epitaxial monolayer graphene turns into a decoupled bilayer. The intercalation is stable in air and can be reversed by annealing to around 900 degrees C.
Avdelning/ar
Publiceringsår
2009
Språk
Engelska
Publikation/Tidskrift/Serie
Physical Review Letters
Volym
103
Issue
24
Länkar
Dokumenttyp
Artikel i tidskrift
Förlag
American Physical Society
Ämne
- Physical Sciences
- Natural Sciences
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 1079-7114