Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

Summary, in English

We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling is more pronounced when the large voltage drop occurs in the narrow bandgap InSb segment. For small negative gate-voltages, the InSb segment can be tuned toward p-type conduction, which induces a strong band-to-band tunneling across the heterostructucture junction. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3633742]

• Författare: Henrik Nilsson; Philippe Caroff; Erik Lind; Mats-Erik Pistol; Claes Thelander; Lars-Erik Wernersson
• Avdelning/ar: Fasta tillståndets fysik; Institutionen för elektro- och informationsteknik; NanoLund: Centre for Nanoscience
• Publiceringsår: 2011
• Språk: Engelska
• Publikation/Tidskrift/Serie: Journal of Applied Physics
• Volym: 110
• Issue: 6
• Länkar: http://dx.doi.org/10.1063/1.3633742
• Dokumenttyp: Artikel i tidskrift
• Förlag: American Institute of Physics (AIP)
• Ämne: Electrical Engineering, Electronic Engineering, Information Engineering; Condensed Matter Physics
• Status: Published
• Forskningsgrupp: Nano
• ISBN/ISSN/Övrigt: ISSN: 0021-8979