Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
Författare
Avdelning/ar
Publiceringsår
2012
Språk
Engelska
Dokumenttyp
Konferensbidrag: abstract
Ämne
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Conference name
ICPS 2012
Conference date
2012-07-29 - 2012-08-03
Conference place
Zürich, Switzerland
Status
Published
Forskningsgrupp
- Nanometer structure consortium (nmC)