Growth and optical properties of strained GaAs-GaxIn1-xP core-shell nanowires
Författare
Summary, in English
We have synthesized GaAs-GaxIn1-xP (0.34 < x < 0.69) core-shell nanowires by metal-organic vapor phase epitaxy. The nanowire core was grown Au-catalyzed at a low temperature (450 degrees C) where only little growth takes place on the side facets. The shell was added by growth at a higher temperature (600 degrees C), where the kinetic hindrance of the side facet growth is overcome. Photoluminescence measurements on individual nanowires at 5 K showed that the emission efficiency increased by 2 to 3 orders of magnitude compared to uncapped samples. Strain effects on the band gap of lattice mismatched core-shell nanowires were studied and confirmed by calculations based on deformation potential theory.
Publiceringsår
2005
Språk
Engelska
Sidor
1943-1947
Publikation/Tidskrift/Serie
Nano Letters
Volym
5
Issue
10
Dokumenttyp
Artikel i tidskrift
Förlag
The American Chemical Society (ACS)
Ämne
- Nano Technology
- Condensed Matter Physics
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 1530-6992