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Photon mapping of single quantum dots by scanning tunneling microscopy induced luminescence spectroscopy

Författare:
Publiceringsår: 2002
Språk: Engelska
Sidor: 2
Publikation/Tidskrift/Serie: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Dokumenttyp: Konferensbidrag
Förlag: Lund Univ

Sammanfattning

Scanning tunneling microscopy induced luminescence (STML) has been used to investigate individual self-assembled InP quantum dots overgrown with GaInP. We will present results correlating the surface morphology with the optical properties of single dots. In particular, the strain induced energy-shift of the dot emission with increasing cap layer thickness and its relation to the overgrowth will be discussed. Effects of the dots on the properties of the overgrown GaInP will also be treated. STML spectra and monochromatic photon maps are compared with results from photoluminescence and transmission electron microscopy measurements. Furthermore, a comparison with theoretical calculations is made

Disputation

Nyckelord

  • Physics and Astronomy
  • single quantum dots
  • Photon mapping
  • scanning tunneling microscopy
  • luminescence spectroscopy
  • self-assembled InP quantum dots
  • optical properties
  • surface morphology
  • strain induced energy-shift
  • increasing cap layer thickness
  • STML spectra
  • dot emission
  • photon maps
  • transmission electron microscopy
  • GaInP
  • photoluminescence

Övrigt

Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
24-28 June 2002
Malmö, Sweden
Published
Yes

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