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High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires

In English

Författare

Summary, in English

We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm2 at 0.50 V, maximum peak current of 67 kA/cm2 at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-κ gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.

Publiceringsår

2011

Språk

Engelska

Sidor

4222-4226

Publikation/Tidskrift/Serie

Nano Letters

Volym

11

Issue

10

Dokumenttyp

Artikel i tidskrift

Förlag

The American Chemical Society (ACS)

Ämne

  • Nano Technology
  • Condensed Matter Physics

Status

Published

Forskningsgrupp

  • Nano
  • Digital ASIC

ISBN/ISSN/Övrigt

  • ISSN: 1530-6992