Photon mapping of single quantum dots by scanning tunneling microscopy induced luminescence spectroscopy
Författare
Summary, in English
Scanning tunneling microscopy induced luminescence (STML) has been used to investigate individual self-assembled InP quantum dots overgrown with GaInP. We will present results correlating the surface morphology with the optical properties of single dots. In particular, the strain induced energy-shift of the dot emission with increasing cap layer thickness and its relation to the overgrowth will be discussed. Effects of the dots on the properties of the overgrown GaInP will also be treated. STML spectra and monochromatic photon maps are compared with results from photoluminescence and transmission electron microscopy measurements. Furthermore, a comparison with theoretical calculations is made
Avdelning/ar
Publiceringsår
2002
Språk
Engelska
Publikation/Tidskrift/Serie
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Dokumenttyp
Konferensbidrag
Förlag
Lund University
Ämne
- Condensed Matter Physics
Nyckelord
- single quantum dots
- Photon mapping
- scanning tunneling microscopy
- luminescence spectroscopy
- self-assembled InP quantum dots
- optical properties
- surface morphology
- strain induced energy-shift
- increasing cap layer thickness
- STML spectra
- dot emission
- photon maps
- transmission electron microscopy
- GaInP
- photoluminescence
Conference name
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
Conference date
2002-06-24 - 2002-06-28
Conference place
Malmö, Sweden
Status
Published