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Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device

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Författare

Summary, in English

By tailoring the boundary of a narrow semiconductor channel to break its symmetry, we have realized a type of nanometer-scale nonlinear device, which we refer to as self-switching device (SSD). An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel depending on the sign of V. This results in a diode-like characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually zero to more than 10 V, by simply adjusting the channel width. The planar and two-terminal structure of the SSD also allows SSD-based circuits to be realized by only one step of lithography. (C) 2003 American Institute of Physics.

Publiceringsår

2003

Språk

Engelska

Sidor

1881-1883

Publikation/Tidskrift/Serie

Applied Physics Letters

Volym

83

Issue

9

Dokumenttyp

Artikel i tidskrift

Förlag

American Institute of Physics (AIP)

Ämne

  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 0003-6951