Webbläsaren som du använder stöds inte av denna webbplats. Alla versioner av Internet Explorer stöds inte längre, av oss eller Microsoft (läs mer här: * https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Var god och använd en modern webbläsare för att ta del av denna webbplats, som t.ex. nyaste versioner av Edge, Chrome, Firefox eller Safari osv.

Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device

In English

Författare

  • Aimin Song
  • M Missous
  • Pär Omling
  • AR Peaker
  • Lars Samuelson
  • Werner Seifert

Summary, in English

By tailoring the boundary of a narrow semiconductor channel to break its symmetry, we have realized a type of nanometer-scale nonlinear device, which we refer to as self-switching device (SSD). An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel depending on the sign of V. This results in a diode-like characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually zero to more than 10 V, by simply adjusting the channel width. The planar and two-terminal structure of the SSD also allows SSD-based circuits to be realized by only one step of lithography. (C) 2003 American Institute of Physics.

Publiceringsår

2003

Språk

Engelska

Sidor

1881-1883

Publikation/Tidskrift/Serie

Applied Physics Letters

Volym

83

Issue

9

Dokumenttyp

Artikel i tidskrift

Förlag

American Institute of Physics (AIP)

Ämne

  • Condensed Matter Physics (including Material Physics, Nano Physics)

Aktiv

Published

ISBN/ISSN/Övrigt

  • ISSN: 0003-6951