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Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices

In English

Författare

  • C. A. Marlow
  • R. P. Taylor
  • T. P. Martin
  • B. C. Scannell
  • H. Linke
  • M. S. Fairbanks
  • G. D. R. Hall
  • I. Shorubalko
  • Lars Samuelson
  • T. M. Fromhold
  • C. V. Brown
  • B. Hackens
  • S. Faniel
  • C. Gustin
  • V. Bayot
  • X. Wallart
  • S. Bollaert
  • A. Cappy
Visa allt

Summary, in English

We present an experimental comparison of magnetoconductance fluctuations measured in the ballistic, quasiballistic, and diffusive scattering regimes of semiconductor devices. In contradiction to expectations, we show that the spectral content of the magnetoconductance fluctuations exhibits an identical fractal behavior for these scattering regimes and that this behavior is remarkably insensitive to device boundary properties. We propose a unified model of fractal conductance fluctuations in the ballistic, quasiballistic, and diffusive transport regimes, in which the generic fractal behavior is generated by a subtle interplay between boundary and material-induced chaotic scattering events.

Publiceringsår

2006

Språk

Engelska

Publikation/Tidskrift/Serie

Physical Review B (Condensed Matter and Materials Physics)

Volym

73

Issue

19

Dokumenttyp

Artikel i tidskrift

Förlag

American Physical Society

Ämne

  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1098-0121