Webbläsaren som du använder stöds inte av denna webbplats. Alla versioner av Internet Explorer stöds inte längre, av oss eller Microsoft (läs mer här: * https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Var god och använd en modern webbläsare för att ta del av denna webbplats, som t.ex. nyaste versioner av Edge, Chrome, Firefox eller Safari osv.

Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study

In English

Författare

Summary, in English

In this work, the nucleation and growth of InAs nanowires on patterned SiO2/Si(111) substrates is studied. It is found that the nanowire yield is strongly dependent on the size of the etched holes in the SiO2, where openings smaller than 180 nm lead to a substantial decrease in nucleation yield, while openings larger than View the MathML source promote nucleation of crystallites rather than nanowires. We propose that this is a result of indium particle formation prior to nanowire growth, where the size of the indium particles, under constant growth parameters, is strongly influenced by the size of the openings in the SiO2 film. Nanowires overgrowing the etched holes, eventually leading to a merging of neighboring nanowires, shed light into the growth mechanism.

Publiceringsår

2011

Språk

Engelska

Sidor

51-56

Publikation/Tidskrift/Serie

Journal of Crystal Growth

Volym

334

Issue

1

Dokumenttyp

Artikel i tidskrift

Förlag

Elsevier

Ämne

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Nyckelord

  • Nanostructures
  • Nanowire growth
  • Metalorganic vapor phase epitaxy
  • Semiconductor III–V materials

Status

Published

Forskningsgrupp

  • Nanometer structure consortium (nmC)
  • Digital ASIC
  • Nano

ISBN/ISSN/Övrigt

  • ISSN: 0022-0248