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Buffer layer free large area bi-layer graphene on SiC(0001)

Publiceringsår: 2010
Språk: Engelska
Sidor: 4-7
Publikation/Tidskrift/Serie: Surface Science
Volym: 604
Nummer: 2
Dokumenttyp: Artikel i tidskrift
Förlag: Elsevier


The influence of hydrogen exposures on monolayer graphene grown on the silicon terminated SiC(0 0 0 1) surface is investigated using photoelectron spectroscopy (PES), low-energy electron microscopy (LEEM) and micro low-energy electron diffraction (mu-LEED). Exposures to ionized hydrogen are shown to have a pronounced effect on the carbon buffer (interface) layer. Exposures to atomic hydrogen are shown to actually convert/transform the monolayer graphene plus carbon buffer layer to bi-layer graphene, i.e. to produce carbon buffer layer free bi-layer graphene on SiC(0 0 0 1). This process is shown to be reversible, so the initial monolayer graphene plus carbon buffer layer situation is recreated after heating to a temperature of about 950 degrees C. A tentative model of hydrogen intercalation is suggested to explain this single to bi-layer graphene transformation mechanism. Our findings are of relevance and importance for various potential applications based on graphene-SiC structures and hydrogen storage. (C) 2009 Elsevier B.V. All rights reserved.


  • Natural Sciences
  • Physical Sciences
  • LEEM
  • Silicon carbide
  • Epitaxial
  • Graphene
  • Bi-layer
  • PES
  • Hydrogenation
  • LEED


  • ISSN: 0039-6028

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