Detection of spin-states in Mn-oped gallium arsenide films
Författare
Summary, in English
We show that isolated magnetic dipoles centred at the position of manganese impurities in a gallium arsenide lattice lead to spin polarized states in the bandgap of the III-V semiconductor. Spectroscopy simulations with a tungsten tip agree well with experimental data; in this case, no difference can be observed for the two magnetic groundstates. But if the signal is read with a magnetic iron tip, it changes by a factor of up to 20, depending on the magnetic orientation of the Mn atom.
Avdelning/ar
Publiceringsår
2007
Språk
Engelska
Publikation/Tidskrift/Serie
Nanotechnology
Volym
18
Issue
4
Dokumenttyp
Artikel i tidskrift
Förlag
IOP Publishing
Ämne
- Nano Technology
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0957-4484