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Nanometer-scale two-terminal semiconductor memory operating at room temperature

Publiceringsår: 2005
Språk: Engelska
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 86
Nummer: 4
Dokumenttyp: Artikel i tidskrift
Förlag: American Institute of Physics


Based on a nanometer-scale semiconductor channel with an intentionally broken geometric symmetry, we have realized a type of memory device that consists of only two terminals, rather than the minimum of three terminals in conventional semiconductor memories. The charge retention time is at least 10 h at cryogenic temperatures and a few minutes at room temperature. Furthermore, the simplicity of the design allows the active part of the devices to be made in a single nanolithography step which, along with the planar structure of the device, provides promising possibilities for a high integration density. (C) 2005 American Institute of Physics.


  • Condensed Matter Physics


  • ISSN: 0003-6951

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