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Serendipitous noise reduction in inductively degenerated CMOS RF LNAs

Publiceringsår: 2003
Språk: Engelska
Sidor: 24-26
Publikation/Tidskrift/Serie: Proceedings of the 2003 NORCHIP Conference
Dokumenttyp: Konferensbidrag


The design of radio-frequency inductively-degenerated

CMOS low-noise-amplifiers does not follow the

guidelines for minimum noise figure. Nonetheless,

state-of-the-art implementations achieve noise figure

values very close to the theoretical minimum. In this

brief contribution, we point out that this is due to the

effect of the parasitic overlap capacitances in the MOS

device acting as transconductor. In particular, we

show that overlap capacitances lead to a significant

induced-gate-noise reduction, especially when deep

sub-micron CMOS processes are used.


  • Electrical Engineering, Electronic Engineering, Information Engineering



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