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Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures

In English

Författare

Summary, in English

Semiconducting InAs and GaAs nano-whiskers have been grown using a chemical beam epitaxy approach in combination with size-selected catalytic Au aerosol particles. The characterization of InAs and GaAs whiskers shows high crystalline quality as seen by transmission electron microscopy. Gate-dependent transport measurements suggests a diffusive electronic transport mechanism. We have also combined these two material systems by growing a very abrupt heterostructure interface within the whiskers, allowing the growth of highly mismatched structures without misfit dislocations. (C) 2002 Elsevier Science B.V. All rights reserved.

Publiceringsår

2002

Språk

Engelska

Sidor

1126-1130

Publikation/Tidskrift/Serie

Physica E: Low-dimensional Systems and Nanostructures

Volym

13

Issue

2-4

Dokumenttyp

Konferensbidrag

Förlag

Elsevier

Ämne

  • Condensed Matter Physics
  • Chemical Sciences

Nyckelord

  • III-V
  • one-dimensional transport
  • nano-whiskers
  • heterostructures

Conference name

Tenth International Conference on Modulated Semiconductor Structures. MSS 10

Conference date

2001-07-23 - 2001-07-27

Conference place

Linz, Austria

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1386-9477