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Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures

Publiceringsår: 2002
Språk: Engelska
Sidor: 1126-1130
Publikation/Tidskrift/Serie: Physica E: Low-dimensional Systems and Nanostructures
Volym: 13
Nummer: 2-4
Dokumenttyp: Konferensbidrag
Förlag: Elsevier


Semiconducting InAs and GaAs nano-whiskers have been grown using a chemical beam epitaxy approach in combination with size-selected catalytic Au aerosol particles. The characterization of InAs and GaAs whiskers shows high crystalline quality as seen by transmission electron microscopy. Gate-dependent transport measurements suggests a diffusive electronic transport mechanism. We have also combined these two material systems by growing a very abrupt heterostructure interface within the whiskers, allowing the growth of highly mismatched structures without misfit dislocations. (C) 2002 Elsevier Science B.V. All rights reserved.


  • Condensed Matter Physics
  • Chemical Sciences
  • III-V
  • one-dimensional transport
  • nano-whiskers
  • heterostructures


Tenth International Conference on Modulated Semiconductor Structures. MSS 10
  • ISSN: 1386-9477

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