Javascript verkar inte påslaget? - Vissa delar av Lunds universitets webbplats fungerar inte optimalt utan javascript, kontrollera din webbläsares inställningar.
Du är här

InAs1-xPx Nanowires for Device Engineering

Publiceringsår: 2006
Språk: Engelska
Sidor: 403-407
Publikation/Tidskrift/Serie: Nano Letters
Volym: 6
Nummer: 3
Dokumenttyp: Artikel i tidskrift
Förlag: The American Chemical Society


We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segments in InAs nanowires with P

concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter

of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution

transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual

heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements

we extract a value of the linear coefficient of the conduction band versus x of 0.6 eV and a nonlinear coefficient, or bowing parameter, of 0.2

eV. Finally, homogeneous InAs0.8P0.2 nanowires were shown to have a nondegenerate n-type doping and function as field-effect transistors at

room temperature.


  • Chemical Sciences
  • Condensed Matter Physics


  • ISSN: 1530-6992

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen