A GaN HEMT power amplifier with variable gate bias for envelope and phase signals
Publikation/Tidskrift/Serie: [Host publication title missing]
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.
This paper describes the design, simulation and measurement of a GaN power amplifier suitable for envelope and phase signal combination. The low-frequency envelope signal is used to vary the gate (bias) voltage of the device, resulting in a pulse width modulated drain voltage, while modulation of supply voltage or current is avoided. The test circuit is implemented using a discrete GaN HEMT power amplifier and discrete surface-mount passive components assembled on a PCB. Measurements showed a maximum drain efficiency of 59% at 360 MHz, at an output power of 29 dBm. The output power as a function of the gate bias voltage varied between 3 and 29 dBm, with the drain efficiency varying between 6 and 59%.
- Electrical Engineering, Electronic Engineering, Information Engineering
Norchip conference, 2007
- ISBN: 978-1-4244-1516-8