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MnAs overlayer on GaN(000(1)under-bar)-(1 x 1) its growth, morphology and electronic structure

  • BJ Kowalski
  • IA Kowalik
  • RJ Iwanowski
  • E Lusakowska
  • M Sawicki
  • Janusz Sadowski
  • I Grzegory
  • S Porowski
Publiceringsår: 2004
Språk: Engelska
Sidor: 645-650
Publikation/Tidskrift/Serie: Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics
Volym: 105
Nummer: 6
Dokumenttyp: Artikel i tidskrift
Förlag: Institute of Physics, Polish Academy of Sciences


MnAs layer has been grown by means of MBE on the GaN(000 (1) under bar)-(1 x 1) surface. Spontaneous formation of MnAs grains with a diameter of 30-60 nm (as observed by atomic force microscopy) occurred for the layer thickness bigger than 7 ML. Ferromagnetic properties of the layer with Curie temperature higher than 330 K were detected by SQUID measurements. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy for MnAs layer thickness of 1, 2, and 8 ML. Density of the valence band states of MnAs and its changes due to the increase in the layer thickness were revealed.


  • Natural Sciences
  • Physical Sciences


  • ISSN: 0587-4246

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