MnAs overlayer on GaN(000(1)under-bar)-(1 x 1) its growth, morphology and electronic structure
Publikation/Tidskrift/Serie: Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics
Dokumenttyp: Artikel i tidskrift
Förlag: Institute of Physics, Polish Academy of Sciences
MnAs layer has been grown by means of MBE on the GaN(000 (1) under bar)-(1 x 1) surface. Spontaneous formation of MnAs grains with a diameter of 30-60 nm (as observed by atomic force microscopy) occurred for the layer thickness bigger than 7 ML. Ferromagnetic properties of the layer with Curie temperature higher than 330 K were detected by SQUID measurements. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy for MnAs layer thickness of 1, 2, and 8 ML. Density of the valence band states of MnAs and its changes due to the increase in the layer thickness were revealed.
- Natural Sciences
- Physical Sciences
- ISSN: 0587-4246