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InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.

In English

Författare

Summary, in English

We demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour phase epitaxy and use it to integrate InSb on extremely lattice-mismatched III-V nanowire templates made of InAs, InP, and GaAs. Influence of temperature, V/III ratio, and diameter are investigated in order to investigate the growth rate and morphology. The range of growth temperatures used for InSb nanowire growth is very similar to that used for planar growth due to the nature of the precursor decomposition. This makes optimization of growth parameters very important, and more difficult than for most other nanowire III-V materials. Analysis of the InSb nanowire epitaxial quality when grown on InAs, InP, and GaAs, along with InSb segment and particle compositions are reported. This successful direct integration of InSb nanowires, on nanowire templates with unprecedented strain levels show great promise for fabrication of vertical InSb devices.

Publiceringsår

2009

Språk

Engelska

Publikation/Tidskrift/Serie

Nanotechnology

Volym

20

Issue

49

Dokumenttyp

Artikel i tidskrift

Förlag

IOP Publishing

Ämne

  • Nano Technology

Status

Published

Forskningsgrupp

  • Nano

ISBN/ISSN/Övrigt

  • ISSN: 0957-4484