Webbläsaren som du använder stöds inte av denna webbplats. Alla versioner av Internet Explorer stöds inte längre, av oss eller Microsoft (läs mer här: * https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Var god och använd en modern webbläsare för att ta del av denna webbplats, som t.ex. nyaste versioner av Edge, Chrome, Firefox eller Safari osv.

InAsP/InAs nanowire heterostructure field effect transistors

In English

Författare

Summary, in English

We here show simulation results that by including a small InAsP heterostructure barrier inside the channel of a InAs nanowire transistor it is possible to increase both the sub threshold slope and on-off ratio with only a modest decrease in the drive current for a fixed gate overdrive. The design is based on the fact that the sharp InAsP heterostructure induces a small barrier in the conduction band and locally increases the bandgap, independent of the applied drain voltage

Publiceringsår

2006

Språk

Engelska

Sidor

173-174

Publikation/Tidskrift/Serie

Device Research Conference

Dokumenttyp

Konferensbidrag

Förlag

IEEE - Institute of Electrical and Electronics Engineers Inc.

Ämne

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Nyckelord

  • nanowire heterostructure field effect transistors
  • InAsP-InAs

Conference name

Device Research Conference, 2006

Conference date

2006-06-26 - 2006-06-28

Conference place

University Park, PA, United States

Status

Published

ISBN/ISSN/Övrigt

  • ISBN: 0-7803-9748-7