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InAsP/InAs nanowire heterostructure field effect transistors

Publiceringsår: 2006
Språk: Engelska
Sidor: 173-174
Publikation/Tidskrift/Serie: Device Research Conference
Dokumenttyp: Konferensbidrag
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.


We here show simulation results that by including a small InAsP heterostructure barrier inside the channel of a InAs nanowire transistor it is possible to increase both the sub threshold slope and on-off ratio with only a modest decrease in the drive current for a fixed gate overdrive. The design is based on the fact that the sharp InAsP heterostructure induces a small barrier in the conduction band and locally increases the bandgap, independent of the applied drain voltage


  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering
  • nanowire heterostructure field effect transistors
  • InAsP-InAs


Device Research Conference, 2006
  • ISBN: 0-7803-9748-7

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