Temperature dependent properties of InSb and InAs nanowire field-effect transistors

Summary, in English

We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.

• Författare: Henrik Nilsson; Philippe Caroff; Claes Thelander; Erik Lind; Olov Karlström; Lars-Erik Wernersson
• Avdelning/ar: Fasta tillståndets fysik; Institutionen för elektro- och informationsteknik; Matematisk fysik; NanoLund: Centre for Nanoscience
• Publiceringsår: 2010
• Språk: Engelska
• Publikation/Tidskrift/Serie: Applied Physics Letters
• Volym: 96
• Issue: 15
• Länkar: http://dx.doi.org/10.1063/1.3402760
• Dokumenttyp: Artikel i tidskrift
• Förlag: American Institute of Physics (AIP)
• Ämne: Condensed Matter Physics
• Nyckelord: field effect transistors; nanowires
• Status: Published
• Forskningsgrupp: Nano
• ISBN/ISSN/Övrigt: ISSN: 0003-6951