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How to control SiC BJT with high efficiency?

In English

Författare

Summary, in English

SiC Bipolar Junction Transistor has many benefits such as low on-state voltage drop, high switching speed and high maximum operating temperature. However it has one major disadvantage that it needs current to be turned on. This causes an increased power requirement of the driver circuit compared to voltage controlled devices like MOSFETs and IGBTs. The proposed driving concept is based on a verified Darlington typology together with a voltage compensation component which gives a solution to this problem. The proposed driving concept is evaluated by both simulation and experimental results. The investigation of parallel connection of SiC BJT transistors that use the proposed drive concept is also included in this paper.

Publiceringsår

2012

Språk

Engelska

Sidor

1-4

Publikation/Tidskrift/Serie

2012 7th International Conference on Integrated Power Electronics Systems (CIPS 2012)

Dokumenttyp

Konferensbidrag

Ämne

  • Other Electrical Engineering, Electronic Engineering, Information Engineering

Nyckelord

  • Darlington typology SiC SiC BJT bipolar junction transistor on-state voltage drop operating temperature switching speed voltage compensation component voltage controlled device

Conference name

2012 7th International Conference on Integrated Power Electronics Systems (CIPS)

Conference date

2012-03-06

Conference place

Nuremberg, Germany

Status

Published

ISBN/ISSN/Övrigt

  • ISBN: 978-3-8007-3414-6