Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions

Summary, in English

In this paper. we present the effect of annealing temperature and annealing time on InAs site-controlled quantum dot growth. Individual InAs quantum dots formed by self-assembling have been positioned into holes, created by partial overgrowth of electron beam induced nano-carbon deposits by metal organic vapor phase epitaxy. As/P exchange reactions produce material sufficient for selective dot nucleation in the holes. Results. showing that As/P exchange reactions occur even when capping the dots with InP are presented. (C) 2002 Elsevier Science B.V. All rights reserved.

• Författare: Magnus Borgström; Tomas Bryllert; T Sass; Lars-Erik Wernersson; Lars Samuelson; Werner Seifert
• Avdelning/ar: Fasta tillståndets fysik; Institutionen för elektro- och informationsteknik
• Publiceringsår: 2003
• Språk: Engelska
• Sidor: 310-316
• Publikation/Tidskrift/Serie: Journal of Crystal Growth
• Volym: 248
• Länkar: http://dx.doi.org/10.1016/S0022-0248(02)01817-1
• Dokumenttyp: Artikel i tidskrift
• Förlag: Elsevier
• Ämne: Electrical Engineering, Electronic Engineering, Information Engineering; Condensed Matter Physics
• Nyckelord: nanomaterials; nanostructures; metalorganic vapor phase epitaxy; semiconducting IIIV materials
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0022-0248