Optically detected extended X-ray absorption fine structure study of InGaN/GaN single quantum wells
Författare
Summary, in English
We have investigated the local atomic environment of the Ga atoms in an InxGa1-xN single quantum well structure using Optically Detected Extended X-ray Absorption Fine Structure (OD-EXAFS). A comparison of the OD-EXAFS data with a theoretical model shows the technique to be site selective for this particular structure and reveals that the quantum well emission originates from regions with x=0.15.
Avdelning/ar
Publiceringsår
2007
Språk
Engelska
Sidor
1503-1504
Publikation/Tidskrift/Serie
AIP Conference Proceedings
Volym
893
Dokumenttyp
Konferensbidrag
Nyckelord
- EXAFS
- InGaN
- Quantum well
Conference name
28th International Conference on the Physics of Semiconductors, ICPS 2006
Conference date
2006-07-24 - 2006-07-28
Conference place
Vienna, Austria
Status
Published
ISBN/ISSN/Övrigt
- ISBN: 9780735403970