Optically detected extended X-ray absorption fine structure study of InGaN/GaN single quantum wells

Summary, in English

We have investigated the local atomic environment of the Ga atoms in an In_xGa_1-xN single quantum well structure using Optically Detected Extended X-ray Absorption Fine Structure (OD-EXAFS). A comparison of the OD-EXAFS data with a theoretical model shows the technique to be site selective for this particular structure and reveals that the quantum well emission originates from regions with x=0.15.

• Författare: N. Rigopoulos; B. Hamilton; G. J. Davies; B. M. Towlson; N. R J Poolton; P. Dawson; D. M. Graham; M. J. Kappers; C. J. Humphreys; S. Carlson
• Avdelning/ar: MAX IV-laboratoriet
• Publiceringsår: 2007
• Språk: Engelska
• Sidor: 1503-1504
• Publikation/Tidskrift/Serie: AIP Conference Proceedings
• Volym: 893
• Länkar: http://dx.doi.org/10.1063/1.2730478
• Dokumenttyp: Konferensbidrag
• Nyckelord: EXAFS; InGaN; Quantum well
• Conference name: 28th International Conference on the Physics of Semiconductors, ICPS 2006
• Conference date: 2006-07-24 - 2006-07-28
• Conference place: Vienna, Austria
• Status: Published
• ISBN/ISSN/Övrigt: ISBN: 9780735403970