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Photoemission study of GaAs (100) grown at low temperature

Publiceringsår: 2002
Språk: Engelska
Publikation/Tidskrift/Serie: Physical Review B (Condensed Matter and Materials Physics)
Volym: 65
Nummer: 11
Dokumenttyp: Artikel i tidskrift
Förlag: American Physical Society


GaAs(100) layers grown by low-temperature (LT) molecular beam epitaxy were studied by means of valence-band and core-level photoelectron spectroscopy. Small differences were found between valence-band spectra from the LT layers and corresponding layers grown at high temperature. In the Ga 3d spectra a new component was found in the LT-GaAs. The relative intensity of this component was found to be practically constant with varying probing depth. It is proposed that this component represents sites coordinated to the five-atom As clusters formed at As-Ga antisites. This interpretation implies a higher density of antisite defects in the near-surface region than typically found in the bulk.


  • Natural Sciences
  • Physical Sciences


  • ISSN: 1098-0121

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