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Photoemission study of GaAs (100) grown at low temperature

In English

Författare

  • H Asklund
  • L Ilver
  • J Kanski
  • Janusz Sadowski
  • M Karlsteen

Summary, in English

GaAs(100) layers grown by low-temperature (LT) molecular beam epitaxy were studied by means of valence-band and core-level photoelectron spectroscopy. Small differences were found between valence-band spectra from the LT layers and corresponding layers grown at high temperature. In the Ga 3d spectra a new component was found in the LT-GaAs. The relative intensity of this component was found to be practically constant with varying probing depth. It is proposed that this component represents sites coordinated to the five-atom As clusters formed at As-Ga antisites. This interpretation implies a higher density of antisite defects in the near-surface region than typically found in the bulk.

Publiceringsår

2002

Språk

Engelska

Publikation/Tidskrift/Serie

Physical Review B (Condensed Matter and Materials Physics)

Volym

65

Issue

11

Dokumenttyp

Artikel i tidskrift

Förlag

American Physical Society

Ämne

  • Natural Sciences
  • Physical Sciences

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1098-0121