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Resonant tunneling permeable base transistor based pulsed oscillator

Publiceringsår: 2004
Språk: Engelska
Sidor: 129-130
Publikation/Tidskrift/Serie: Device Research Conference - Conference Digest, DRC
Dokumenttyp: Konferensbidrag
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.


A technology was developed to embed nm-sized metallic features in close vicinity to semiconductor heterostructures, which allows a direct integration of resonant tunneling diodes (RTD) inside the channel of permeable base transistor. A AlGaAs/InGaAs based RTD was grown by molecular beam epitaxy (MBE), with peak current density either 70 or 120 kA/cm2. A fundamental oscillation frequency of 800 MHz was detected, with higher harmonics up to 2.6 GHz, using a spectrum analyzer. It was found that the oscillations could be quenched by applying a large (-1.5V) negative gate bias. The results indicate that a three terminal resonant tunneling transistor can be used to obtain pulsed operation of a resonant tunneling based oscillator.


  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Peak-current density
  • Gate capacitance
  • Resonant tunneling diodes (RTD)
  • Resonant tunneling permeable based transistor (RT0PBT)


Device Research Conference - Conference Digest, 62nd DRC
  • ISSN: 1548-3770

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