Magnetic anisotropy investigations of (Ga,Mn)As with a large epitaxial strain
Författare
Summary, in English
Magnetic properties of 20 nm thick (Ga,Mn)As layer deposited on (Ga,ln)As buffer with very large epitaxial tensile strain are investigated. Gal,In,As buffer with x=30% provides a 2% lattice mismatch, which is an important extension of the mismatch range studied so far (up to 0.5%). Evolution of magnetic anisotropy as a function of temperature is determined by magnetotransport measurements. Additionally, results of direct measurements of magnetization are shown. (C) 2015 Published by Elsevier B.V.
Avdelning/ar
Publiceringsår
2015
Språk
Engelska
Sidor
48-52
Publikation/Tidskrift/Serie
Journal of Magnetism and Magnetic Materials
Volym
396
Dokumenttyp
Artikel i tidskrift
Förlag
Elsevier
Ämne
- Condensed Matter Physics
Nyckelord
- Magnetic anisotropy
- Spintronic
- GaMnAs
- Epitaxial pressure
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0304-8853