Anti-domain-free GaP, grown in atomically flat (001) Si sub-mu m-sized openings
Publikation/Tidskrift/Serie: Applied Physics Letters
Dokumenttyp: Artikel i tidskrift
Förlag: American Institute of Physics
We demonstrate a method for growth of GaP nanocrystals on Si(001), developed to avoid defects related to antiphase domain boundaries in the proximity of the GaP/Si interface. The technique is based on sub-mum-sized selective-area epitaxy of GaP on atomically flat Si in masked openings. We have used field-emission scanning electron microscopy together with transmission electron microscopy to illustrate the method with examples of monocrystalline GaP nanocrystals. The optical properties of the nanocrystals were investigated by low-temperature cathodoluminescence.
- Chemical Sciences
- Condensed Matter Physics
- ISSN: 0003-6951