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Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

Publiceringsår: 2012
Språk: Engelska
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 100
Nummer: 25
Dokumenttyp: Artikel i tidskrift
Förlag: American Institute of Physics


Axially defined GaInP single nanowire (NW) p-i-n junctions are demonstrated, with photocurrent response and yellow-green electroluminescence near the indirect bandgap crossover point at 2.18 eV (569 nm). We use DEZn and H2S as p- and n-type dopants, and find that they both affect the material composition and the crystal structure. The photovoltaic efficiency is comparable to single NW devices from binary III-V materials. These results demonstrate the potential of GaInP nanowires as a high-bandgap material for multijunction solar cells and light-emitting devices in the visible regime. (C) 2012 American Institute of Physics. []


  • Condensed Matter Physics
  • Chemical Sciences


  • ISSN: 0003-6951

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