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Heterogeneous integration of InAs on W/GaAs by MOVPE

Publiceringsår: 2008
Språk: Engelska
Sidor: 042043-042043
Publikation/Tidskrift/Serie: Journal of Physics: Conference Series
Volym: 100
Dokumenttyp: Konferensbidrag
Förlag: IOP Publishing


InAs has been grown on W-GaAs patterned substrates using MOVPE. The selectivity of the growth and the nucleation process has been studied as a function of the temperature and the V/III-ratio in the MOVPE reactor. It is shown that the W guides the nucleation of the InAs on the GaAs and that the islands formed may be used to embed metal features in a hybride InAs/GaAs structure in agreement with previous overgrowth studies of W-InAs and W-GaAs. The electrical properties has also been evaluated demonstrating a reduction of resistance by a factor 5 for a hybride structure with an embedded grating as compared to an InAs/GaAs reference sample.


  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics


17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology
  • Nano-lup-obsolete
  • ISSN: 1742-6596
  • ISSN: 1742-6588

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