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A 65-nm CMOS Area Optimized De-synchronization Flow for sub-V-T Designs

Författare

Summary, in English

This paper proposes a process independent post layout de-synchronization flow implemented in tool command language working on designs operating in the sub-V-T regime. The overhead due to the self-timed operation is combated by introducing full-custom delay elements and latches for a standard 65-nm CMOS process. The flow offers the possibility to adjust granularity based on user requirements. Case studies with different reference designs manifested an average reduction of area and power overhead from 105% to 9% and 174% to 58% in comparison to a full standard cell de-synchronization approach.

Publiceringsår

2013

Språk

Engelska

Sidor

380-385

Publikation/Tidskrift/Serie

2013 IFIP/IEEE 21st International Conference on Very Large Scale Integration (VLSI-SoC)

Dokumenttyp

Konferensbidrag

Förlag

IEEE - Institute of Electrical and Electronics Engineers Inc.

Ämne

  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

IFIP/IEEE 21st International Conference on Very Large Scale Integration (VLSI-SoC)

Conference date

2013-10-07 - 2013-10-09

Status

Published