Growth of one-dimensional nanostructures in MOVPE

Summary, in English

The use of metal organic vapor-phase epitaxy (MOVPE) for growth of one-dimensional nanostructures in the material systems GaAs, GaP, InAs and InP is investigated. Some kinetic effects are discussed, especially the general finding that in MOVPE thinner whiskers grow faster than thicker whiskers. Effects of growth temperature on growth rate and shape of the whiskers, the effects of different growth directions on the perfection of the materials and the possibilities to grow heterostructures in axial and lateral directions are reported. Ways to overcome the randomness in whisker growth by controlled seeding of the Au particles and by using lithography for site control are demonstrated.

• Författare: Werner Seifert; Magnus Borgström; Knut Deppert; Kimberly Dick Thelander; Jonas Johansson; Magnus Larsson; Thomas Mårtensson; Niklas Sköld; C Patrik T Svensson; Brent Wacaser; Reine Wallenberg; Lars Samuelson
• Avdelning/ar: Fasta tillståndets fysik; Centrum för analys och syntes
• Publiceringsår: 2004
• Språk: Engelska
• Sidor: 211-220
• Publikation/Tidskrift/Serie: Journal of Crystal Growth
• Volym: 272
• Issue: 1-4
• Länkar: http://dx.doi.org/10.1016/j.jcrysgro.2004.09.023
• Dokumenttyp: Artikel i tidskrift
• Förlag: Elsevier
• Ämne: Chemical Sciences; Condensed Matter Physics
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0022-0248