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Growth of one-dimensional nanostructures in MOVPE

Publiceringsår: 2004
Språk: Engelska
Sidor: 211-220
Publikation/Tidskrift/Serie: Journal of Crystal Growth
Volym: 272
Nummer: 1-4
Dokumenttyp: Artikel i tidskrift
Förlag: Elsevier


The use of metal organic vapor-phase epitaxy (MOVPE) for growth of one-dimensional nanostructures in the material systems GaAs, GaP, InAs and InP is investigated. Some kinetic effects are discussed, especially the general finding that in MOVPE thinner whiskers grow faster than thicker whiskers. Effects of growth temperature on growth rate and shape of the whiskers, the effects of different growth directions on the perfection of the materials and the possibilities to grow heterostructures in axial and lateral directions are reported. Ways to overcome the randomness in whisker growth by controlled seeding of the Au particles and by using lithography for site control are demonstrated.


  • Chemical Sciences
  • Condensed Matter Physics


  • ISSN: 0022-0248

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