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Low power multi-band CMOS receiver front-end

Publiceringsår: 2010
Språk: Engelska
Publikation/Tidskrift/Serie: [Host publication title missing]
Dokumenttyp: Konferensbidrag
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.


A Multi-band CMOS front-end was designed and fabricated in a 0.13μm CMOS process. The front-end employs a common-gate low noise amplifier (LNA) with

capacitive cross coupling (CCC) technique and a double balanced mixer. The band selection is performed by switching capacitors in and out of the LNA load, changing the resonance frequencies ranging from 2.5GHz to 4.5GHz in

16 different frequency bands. The measured noise figure is from 2.8dB in the higher bands to 4dB in lower bands. The conversion gain ranges from 20dB in the higher bands down to 14.5dB in the lower bands, and the third order intercept point (IIP3) is above -14dBm. The input matching S11 is well

below -10dB at all frequencies. The front-end draws 3.85mA from a 1.2V power supply.


  • Electrical Engineering, Electronic Engineering, Information Engineering
  • capacitive cross coupling
  • multi-band
  • LNA
  • mixer


PRIME 2010, 6th Conference on Ph.D. Research in Microelectronics & Electronics
  • Elektronikkonstruktion-lup-obsolete
  • Analog RF-lup-obsolete
  • Data converters & RF-lup-obsolete

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