Nanowire-based multiple quantum dot memory
Författare
Summary, in English
The authors propose and demonstrate an alternative memory concept in which a storage island is connected to a nanowire containing a stack of nine InAs quantum dots, each separated by thin InP tunnel barriers. Transport through the quantum dot structure is suppressed for a particular biasing window due to misalignment of the energy levels. This leads to hysteresis in the charging/discharging of the storage island. The memory operates for temperatures up to around 150 K and has write times down to at least 15 ns. A comparison is made to a nanowire memory based on a single, thick InP barrier.
Publiceringsår
2006
Språk
Engelska
Publikation/Tidskrift/Serie
Applied Physics Letters
Volym
89
Issue
16
Dokumenttyp
Artikel i tidskrift
Förlag
American Institute of Physics (AIP)
Ämne
- Condensed Matter Physics
- Chemical Sciences
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0003-6951