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Nanowire-based multiple quantum dot memory

Publiceringsår: 2006
Språk: Engelska
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 89
Nummer: 16
Dokumenttyp: Artikel i tidskrift
Förlag: American Institute of Physics


The authors propose and demonstrate an alternative memory concept in which a storage island is connected to a nanowire containing a stack of nine InAs quantum dots, each separated by thin InP tunnel barriers. Transport through the quantum dot structure is suppressed for a particular biasing window due to misalignment of the energy levels. This leads to hysteresis in the charging/discharging of the storage island. The memory operates for temperatures up to around 150 K and has write times down to at least 15 ns. A comparison is made to a nanowire memory based on a single, thick InP barrier.


  • Condensed Matter Physics
  • Chemical Sciences


  • ISSN: 0003-6951

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