Vertical high mobility wrap-gated InAs nanowire transistor
Författare
Summary, in English
Publiceringsår
2005
Språk
Engelska
Publikation/Tidskrift/Serie
63rd Device Research Conference Digest, 2005. DRC '05
Volym
1
Dokumenttyp
Konferensbidrag
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
- Condensed Matter Physics
Nyckelord
- wrap gated field effect transistor
- transconductance
- current saturation
- sub threshold characteristics
- InAs
- -0.15 V
- high mobility
- nanowire transistor
Conference name
Device Research Conference, 2005
Conference date
2005-06-20 - 2005-06-22
Conference place
Santa Barbara, CA, United States
Status
Published
ISBN/ISSN/Övrigt
- ISBN: 0-7803-9040-7