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Interface composition of InAs nanowires with Al2O2 and HfO2 thin films

Publiceringsår: 2011
Språk: Engelska
Sidor: 1-222907
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 99
Nummer: 22
Dokumenttyp: Artikel i tidskrift
Förlag: American Institute of Physics


Abstract in Undetermined

Vertical InAs nanowires (NWs) wrapped by a thin high-kappa dielectric layer may be a key to the next generation of high-speed metal-oxide-semiconductor devices. Here, we have investigated the structure and chemical composition of the interface between InAs NWs and 2 nm thick Al(2)O(3) and HfO(2) films. The native oxide on the NWs is significantly reduced upon high-kappa deposition, although less effective than for corresponding planar samples, resulting in a 0.8 nm thick interface layer with an In-/As-oxide composition of about 0.7/0.3. The exact oxide reduction and composition including As-suboxides and the role of the NW geometry are discussed in detail.


  • Materials Engineering
  • high-k dielectric thin films
  • alumina
  • hafnium compounds
  • indium
  • compounds
  • interface phenomena
  • nanostructured materials
  • nanowires
  • semiconductor materials


  • Nano-lup-obsolete
  • ISSN: 0003-6951

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