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Novel nanoelectronic triodes and logic devices with TBJs

Publiceringsår: 2004
Språk: Engelska
Sidor: 164-166
Publikation/Tidskrift/Serie: IEEE Electron Device Letters
Volym: 25
Nummer: 4
Dokumenttyp: Artikel i tidskrift
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.


In this letter, we demonstrate the realization of novel diodes, triodes, and logic gates with three-terminal ballistic junctions (TBJs) made from a semiconductor heterostructure. The approach exploits the ballistic nature of electron transport, which has emerged in the nanostructures. Importantly, we show that TBJs function as logic AND gates and can be used to construct other compound logic gates, such as NAND gates with voltage gain, when combined with a point contact (an inverter). The demonstrated devices show favorable characteristics such as low turn-on voltage in rectification and room-temperature operation.


  • Condensed Matter Physics
  • ballistic devices
  • logic gates
  • nanoelectronics
  • ballistic junctions (TBJs)
  • three-terminal
  • diodes
  • triodes


  • ISSN: 0741-3106

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