Javascript verkar inte påslaget? - Vissa delar av Lunds universitets webbplats fungerar inte optimalt utan javascript, kontrollera din webbläsares inställningar.
Du är här

Magnetoresistive memory in ferromagnetic (Ga,Mn)As nanostructures

  • T. Wosinski
  • T. Figielski
  • A. Morawski
  • A. Makosa
  • R. Szymczak
  • J. Wrobel
  • Janusz Sadowski
Publiceringsår: 2008
Språk: Engelska
Sidor: 1097-1104
Publikation/Tidskrift/Serie: Materials Sceince - Poland
Volym: 26
Nummer: 4
Dokumenttyp: Konferensbidrag
Förlag: Oficyny Wydawniczej Politechniki Wrocławskiej


Magneto-resistive nanostructures have been investigated. The structures were fabricated by electron beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As, in shape of three nanowires joined in one point and forming three-terminal devices, in which an electric current can be driven through any of the three pairs of nanowires. In these devices, a novel magneto-resistive memory effect has been demonstrated, related to a rearrangement of magnetic domain walls between different pairs of nanowires in the device consisting in that its zero-field resistance depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing basic elements of nonvolatile memory cells.


  • Physical Sciences
  • Natural Sciences
  • nanostructure
  • ferromagnetic semiconductor
  • magnetoresistance
  • domain wall


4th MAG-EL-MAT Members Meeting 2006
  • ISSN: 0137-1339
  • ISSN: 2083-134X

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen