ZnTe nanowires grown on GaAs(100) substrates by molecular beam epitaxy
Publikation/Tidskrift/Serie: Applied Physics Letters
Dokumenttyp: Artikel i tidskrift
Förlag: American Institute of Physics
ZnTe nanowires with an average diameter of about 30 nm and lengths above 1 mu m were grown on GaAs(100) substrate by molecular beam epitaxy. The growth process was based on the Au-catalyzed vapor-liquid-solid mechanism. A thin gold layer (3-20 angstrom thick) annealed in high vacuum prior to the nanowire growth was used as a source of catalytic nanoparticles. The nanowires are inclined about 55 degrees to the (100) substrate surface normal. They have a zinc-blende crystal structure and their growth axis is < 111 >.
- Physical Sciences
- Natural Sciences
- ISSN: 0003-6951